Three step deep reactive ion etch for high density trench etching

Deep Reactive Ion Etching (DRIE)

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Mask material effects in cryogenic deep reactive ion etching

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Cryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK

High Aspect-ratio Nanoscale Etching in Silicon Using Electron Beam Lithography and Deep Reactive Ion Etching (drie) Technique

This work is dedicated to my dear grandmother, who has not only taught me that learning is a lifelong matter, but has also inspired me by being an example herself even at the age of 80. for the help on design and modeling; and all the members of the IMEMS group for creating a collaborative and pleasant atmosphere. Special thanks to all the MiRC Cleanroom staff, who I am greatly indebted to, for...